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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPCF8A01(TE85L). The FET features of the product include schottky diode (isolated). It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.2v @ 200µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-smd, flat lead. The maximum gate charge and given voltages include 7.5 nc @ 5 v. It has a maximum Rds On and voltage of 49mohm @ 1.5a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 330mw (ta). The product's input capacitance at maximum includes 590 pf @ 10 v. The product is available in surface mount configuration. The product u-mosiii, is a highly preferred choice for users. vs-8 (2.9x1.5) is the supplier device package value. The continuous current drain at 25°C is 3a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpcf8a01, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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