Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Width:
3.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1V
Package Type:
1212
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
38.5 nC @ 10 V
Channel Type:
N
Length:
3.15mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
46.3 W
Series:
TrenchFET
Maximum Gate Source Voltage:
-16 V, +20 V
Height:
1.07mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.7V
Maximum Drain Source Resistance:
4 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs:
2.7mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs:
58 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
+20V, -16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.7W (Ta), 46.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2455 pF @ 15 V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C:
27.6A (Ta), 40A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISC06
ECCN:
EAR99
