Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
80 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
176 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
4V
Channel Type:
N
Width:
9.65mm
Length:
10.67mm
Maximum Drain Source Resistance:
5 mΩ
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
110 A
Minimum Gate Threshold Voltage:
2V
Forward Diode Voltage:
1.25V
Height:
4.58mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
NTBS2
Detailed Description:
N-Channel 60V 110A (Tc) 176W (Tj) Surface Mount D²PAK-3 (TO-263-3)
Input Capacitance (Ciss) (Max) @ Vds:
6655pF @ 30V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
110nC @ 10V
Rds On (Max) @ Id, Vgs:
2.7mOhm @ 80A, 10V
Supplier Device Package:
D²PAK-3 (TO-263-3)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
176W (Tj)
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
