ON Semiconductor NVD4804NT4G N-channel MOSFET, 117 A, 30 V, 3-Pin DPAK

NVD4804NT4G ON Semiconductor  N-channel MOSFET, 117 A, 30 V, 3-Pin DPAK
NVD4804NT4G
NVD4804NT4G
ON Semiconductor

Product Information

Base Part Number:
NVD480
Detailed Description:
N-Channel 30V 14.5A (Ta), 124A (Tc) 1.43W (Ta), 107W (Tc) Surface Mount DPAK
Input Capacitance (Ciss) (Max) @ Vds:
4490pF @ 12V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 11.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 4.5V
Rds On (Max) @ Id, Vgs:
4mOhm @ 30A, 11.5V
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
1.43W (Ta), 107W (Tc)
Current - Continuous Drain (Id) @ 25°C:
14.5A (Ta), 124A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is N-channel MOSFET 117 A 30 V 3-Pin DPAK manufactured by ON Semiconductor. The manufacturer part number is NVD4804NT4G. Base Part Number: nvd480. It features n-channel 30v 14.5a (ta), 124a (tc) 1.43w (ta), 107w (tc) surface mount dpak. The product's input capacitance at maximum includes 4490pf @ 12v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 11.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 40nc @ 4.5v. It has a maximum Rds On and voltage of 4mohm @ 30a, 11.5v. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The product carries maximum power dissipation 1.43w (ta), 107w (tc). The continuous current drain at 25°C is 14.5a (ta), 124a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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DPAK Device Assembly Site Add 3/Oct/2016(PCN Assembly/Origin)
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Mold Compound Update 25/Feb/2015(PCN Design/Specification)
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Mold Compound Revision 24/Apr/2015(PCN Design/Specification)
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Mult Dev Eol 12/Jul/2018(PCN Obsolescence/ EOL)
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Reactivation 29/Aug/2018(PCN Obsolescence/ EOL)
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Mult Dev EOL 24/Jul/2019(PCN Obsolescence/ EOL)
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NTD4804N(Datasheets)

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