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This is manufactured by IXYS-RF. The manufacturer part number is IXFK21N100F. It has a maximum Rds On and voltage of 500mohm @ 10.5a, 10v. It features n-channel 1000v 21a (tc) 500w (tc) through hole to-264 (ixfk). The product's input capacitance at maximum includes 5500pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 5.5v @ 4ma. The product hiperrf™, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 160nc @ 10v. to-264 (ixfk) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-264-3, to-264aa. The product carries maximum power dissipation 500w (tc). The product has a 1000v drain to source voltage. The continuous current drain at 25°C is 21a (tc). This product use mosfet (metal oxide) technology. The ixys-rf's product offers user-desired applications.
For more information please check the datasheets.
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