Taiwan Semiconductor Corporation TSM60NB041PW C1G

TSM60NB041PW-C1G Taiwan Semiconductor Corporation TSM60NB041PW C1G
Taiwan Semiconductor Corporation

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
41mOhm @ 21.7A, 10V
title:
TSM60NB041PW C1G
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
TSM60NB041PW C1G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/7623416
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
6120 pF @ 100 V
Mounting Type:
Through Hole
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
139 nC @ 10 V
Supplier Device Package:
TO-247
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
78A (Tc)
Power Dissipation (Max):
446W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TSM60
ECCN:
EAR99
Checking for live stock

This is manufactured by Taiwan Semiconductor Corporation. The manufacturer part number is TSM60NB041PW C1G. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 41mohm @ 21.7a, 10v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 6120 pf @ 100 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 139 nc @ 10 v. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 78a (tc). The product carries maximum power dissipation 446w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tsm60, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
OBS 22/Jan/2024(PCN Obsolescence/ EOL)
pdf icon
Taiwan Semi RoHS(Environmental Information)
pdf icon
Taiwan Semi REACH(Environmental Information)

Reviews

  • Be the first to review.


FAQs

Yes. You can also search TSM60NB041PW C1G on website for other similar products.
We accept all major payment methods for all products including ET16678385. Please check your shopping cart at the time of order.
You can order Taiwan Semiconductor Corporation brand products with TSM60NB041PW C1G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Taiwan Semiconductor Corporation TSM60NB041PW C1G. You can also check on our website or by contacting our customer support team for further order details on Taiwan Semiconductor Corporation TSM60NB041PW C1G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16678385 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Taiwan Semiconductor Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16678385.
Yes. We ship TSM60NB041PW C1G Internationally to many countries around the world.