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This is manufactured by Taiwan Semiconductor Corporation. The manufacturer part number is TSM2N7000KCT A3G. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. It has a maximum Rds On and voltage of 5ohm @ 100ma, 10v. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 60 pf @ 25 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 0.4 nc @ 4.5 v. to-92 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 300ma (ta). The product carries maximum power dissipation 400mw (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tsm2n7000, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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