Taiwan Semiconductor Corporation TSM170N06PQ56 RLG
Product Information
Manufacturer Standard Lead Time:
32 Weeks
Rds On (Max) @ Id, Vgs:
17mOhm @ 8A, 10V
Detailed Description:
N-Channel 60V 44A (Tc) 73.5W (Tc) Surface Mount 8-PDFN (5x6)
Input Capacitance (Ciss) (Max) @ Vds:
1556pF @ 30V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
Supplier Device Package:
8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerTDFN
Power Dissipation (Max):
73.5W (Tc)
Current - Continuous Drain (Id) @ 25°C:
44A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Taiwan Semiconductor Corporation
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship TSM170N06PQ56 RLG Internationally to many countries around the world.
This is manufactured by Taiwan Semiconductor Corporation. The manufacturer part number is TSM170N06PQ56 RLG. It has typical 32 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 17mohm @ 8a, 10v. It features n-channel 60v 44a (tc) 73.5w (tc) surface mount 8-pdfn (5x6). The product's input capacitance at maximum includes 1556pf @ 30v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 29nc @ 10v. 8-pdfn (5x6) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powertdfn. The product carries maximum power dissipation 73.5w (tc). The continuous current drain at 25°C is 44a (tc). This product use mosfet (metal oxide) technology. The taiwan semiconductor corporation's product offers user-desired applications.
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