Taiwan Semiconductor Corporation TSM070NA04LCR RLG
Product Information
Base Part Number:
TSM070
Detailed Description:
N-Channel 40V 91A (Tc) 113W (Tc) Surface Mount 8-PDFN (5x6)
Input Capacitance (Ciss) (Max) @ Vds:
1469pF @ 20V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
23.5nC @ 10V
Rds On (Max) @ Id, Vgs:
7mOhm @ 14A, 10V
Supplier Device Package:
8-PDFN (5x6)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerTDFN
Power Dissipation (Max):
113W (Tc)
Current - Continuous Drain (Id) @ 25°C:
91A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Taiwan Semiconductor Corporation
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship TSM070NA04LCR RLG Internationally to many countries around the world.
This is manufactured by Taiwan Semiconductor Corporation. The manufacturer part number is TSM070NA04LCR RLG. Base Part Number: tsm070. It features n-channel 40v 91a (tc) 113w (tc) surface mount 8-pdfn (5x6). The product's input capacitance at maximum includes 1469pf @ 20v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 23.5nc @ 10v. It has a maximum Rds On and voltage of 7mohm @ 14a, 10v. 8-pdfn (5x6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powertdfn. The product carries maximum power dissipation 113w (tc). The continuous current drain at 25°C is 91a (tc). This product use mosfet (metal oxide) technology. The taiwan semiconductor corporation's product offers user-desired applications.
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