Nexperia USA Inc. PSMN1R0-40ULDX

PSMN1R0-40ULDX Nexperia USA Inc.
Nexperia USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-1023, 4-LFPAK
Rds On (Max) @ Id, Vgs:
-
Gate Charge (Qg) (Max) @ Vgs:
127 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
-
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
164W
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LFPAK56, Power-SO8
Current - Continuous Drain (Id) @ 25°C:
280A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN1R0
ECCN:
EAR99
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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PSMN1R0-40ULDX. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-1023, 4-lfpak. The maximum gate charge and given voltages include 127 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 164w. It has a long 6 weeks standard lead time. The product is available in surface mount configuration. lfpak56, power-so8 is the supplier device package value. The continuous current drain at 25°C is 280a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to psmn1r0, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev Wafer Test Chgs 4/Feb/2022(PCN Assembly/Origin)
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PSMN1R0-40ULD(Datasheets)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)

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