This is manufactured by Nexperia USA Inc.. The manufacturer part number is PH1930AL,115. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.15v @ 1ma. Moreover, the product comes in sc-100, sot-669. The maximum gate charge and given voltages include 64 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 2mohm @ 15a, 10v. It carries FET type n-channel. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 3980 pf @ 12 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. lfpak56, power-so8 is the supplier device package value. The continuous current drain at 25°C is 100a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PH1930AL,115. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.15v @ 1ma. Moreover, the product comes in sc-100, sot-669. The maximum gate charge and given voltages include 64 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 2mohm @ 15a, 10v. It carries FET type n-channel. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 3980 pf @ 12 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. lfpak56, power-so8 is the supplier device package value. The continuous current drain at 25°C is 100a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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