Central Semiconductor Corp CMPDM203NH BK

Central Semiconductor Corp

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-3 Flat Leads
Rds On (Max) @ Id, Vgs:
50mOhm @ 1.6A, 4.5V
title:
CMPDM203NH BK
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
350mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
395 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 4.5 V
Supplier Device Package:
SOT-23F
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
3.2A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Central Semiconductor Corp. The manufacturer part number is CMPDM203NH BK. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-3 flat leads. It has a maximum Rds On and voltage of 50mohm @ 1.6a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The product has a 20 v drain to source voltage. The maximum Vgs rate is 12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 350mw (ta). The product's input capacitance at maximum includes 395 pf @ 10 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 10 nc @ 4.5 v. sot-23f is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 3.2a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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Mult Dev EOL 6/Feb/2018(PCN Obsolescence/ EOL)
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CMPDM203NH(Datasheets)
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RoHS Cert(Environmental Information)

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