Cree/Wolfspeed CPMF-1200-S080B

Cree/Wolfspeed

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
Die
Gate Charge (Qg) (Max) @ Vgs:
90.8 nC @ 20 V
Rds On (Max) @ Id, Vgs:
110mOhm @ 20A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Bulk
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -5V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
313mW (Tj)
Input Capacitance (Ciss) (Max) @ Vds:
1915 pF @ 800 V
Mounting Type:
Surface Mount
Series:
Z-FET™
Supplier Device Package:
Die
Current - Continuous Drain (Id) @ 25°C:
50A (Tj)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
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This is manufactured by Cree/Wolfspeed. The manufacturer part number is CPMF-1200-S080B. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in die. The maximum gate charge and given voltages include 90.8 nc @ 20 v. It has a maximum Rds On and voltage of 110mohm @ 20a, 20v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. It is shipped in bulk package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +25v, -5v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 313mw (tj). The product's input capacitance at maximum includes 1915 pf @ 800 v. The product is available in surface mount configuration. The product z-fet™, is a highly preferred choice for users. die is the supplier device package value. The continuous current drain at 25°C is 50a (tj). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.

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Mult Device EOL 1/Jan/2017(PCN Obsolescence/ EOL)
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CPMF-1200-S080B(Datasheets)

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