NXP USA Inc. SI2302DS,215

SI2302DS-215 NXP USA Inc. SI2302DS,215
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
650mV @ 1mA (Min)
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
85mOhm @ 3.6A, 4.5V
edacadModel:
SI2302DS,215 Models
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
edacadModelUrl:
/en/models/1158304
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
830mW (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
230 pF @ 10 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
SOT-23 (TO-236AB)
Current - Continuous Drain (Id) @ 25°C:
2.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI2
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is SI2302DS,215. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 650mv @ 1ma (min). The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 85mohm @ 3.6a, 4.5v. The maximum gate charge and given voltages include 10 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 830mw (tc). The product's input capacitance at maximum includes 230 pf @ 10 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. sot-23 (to-236ab) is the supplier device package value. The continuous current drain at 25°C is 2.5a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to si2, a base product number of the product. The product is designated with the ear99 code number.

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NXP USA Inc REACH(Environmental Information)
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NXP USA Inc RoHS Cert(Environmental Information)
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MCU Dip Supply Situation 12/May/2015(PCN Obsolescence/ EOL)
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SI2302DS(Datasheets)
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All Dev Label Update 15/Dec/2020(PCN Packaging)

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FAQs

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Yes. We ship SI2302DS,215 Internationally to many countries around the world.