NXP USA Inc. PMV60EN,215

PMV60EN-215 NXP USA Inc. PMV60EN,215
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
55mOhm @ 2A, 10V
edacadModel:
PMV60EN,215 Models
Gate Charge (Qg) (Max) @ Vgs:
9.4 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/949642
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
350 pF @ 30 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
SOT-23 (TO-236AB)
Current - Continuous Drain (Id) @ 25°C:
4.7A (Tc)
Power Dissipation (Max):
280mW (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMV6
ECCN:
EAR99
Checking for live stock

This is manufactured by NXP USA Inc.. The manufacturer part number is PMV60EN,215. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 55mohm @ 2a, 10v. The maximum gate charge and given voltages include 9.4 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 350 pf @ 30 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. sot-23 (to-236ab) is the supplier device package value. The continuous current drain at 25°C is 4.7a (tc). The product carries maximum power dissipation 280mw (tj). This product use mosfet (metal oxide) technology. Moreover, it corresponds to pmv6, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
MCU Dip Supply Situation 12/May/2015(PCN Obsolescence/ EOL)
pdf icon
NXP USA Inc REACH(Environmental Information)
pdf icon
NXP USA Inc RoHS Cert(Environmental Information)
pdf icon
All Dev Label Update 15/Dec/2020(PCN Packaging)

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search PMV60EN,215 on website for other similar products.
We accept all major payment methods for all products including ET16289629. Please check your shopping cart at the time of order.
You can order NXP USA Inc. brand products with PMV60EN,215 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of NXP USA Inc. PMV60EN,215. You can also check on our website or by contacting our customer support team for further order details on NXP USA Inc. PMV60EN,215.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16289629 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "NXP USA Inc." products on our website by using Enrgtech's Unique Manufacturing Part Number ET16289629.
Yes. We ship PMV60EN,215 Internationally to many countries around the world.