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This is manufactured by NXP USA Inc.. The manufacturer part number is PMFPB6532UP,115. The FET features of the product include schottky diode (isolated). It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-udfn exposed pad. It has a maximum Rds On and voltage of 70mohm @ 1a, 4.5v. The maximum gate charge and given voltages include 6 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 520mw (ta), 8.3w (tc). The product's input capacitance at maximum includes 380 pf @ 10 v. The product is available in surface mount configuration. 6-huson (2x2) is the supplier device package value. The continuous current drain at 25°C is 3.5a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to pmfpb, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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