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This is manufactured by Microsemi Corporation. The manufacturer part number is APTC60DAM35T1G. It has a maximum Rds On and voltage of 35mohm @ 72a, 10v. It features n-channel 600v 72a (tc) 416w (tc) chassis mount sp1. The product's input capacitance at maximum includes 14000pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 3.9v @ 5.4ma. The product has a 600v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 518nc @ 10v. sp1 is the supplier device package value. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sp1. The product carries maximum power dissipation 416w (tc). The continuous current drain at 25°C is 72a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.
For more information please check the datasheets.
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