Microsemi Corporation APT55M50JFLL

APT55M50JFLL Microsemi Corporation
Microsemi Corporation

Product Information

Rds On (Max) @ Id, Vgs:
50mOhm @ 38.5A, 10V
Detailed Description:
N-Channel 550V 77A (Tc) 694W (Tc) Chassis Mount ISOTOP®
Input Capacitance (Ciss) (Max) @ Vds:
12400pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
5V @ 5mA
Series:
POWER MOS 7®
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
265nC @ 10V
Supplier Device Package:
ISOTOP®
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
SOT-227-4, miniBLOC
Power Dissipation (Max):
694W (Tc)
Drain to Source Voltage (Vdss):
550V
Current - Continuous Drain (Id) @ 25°C:
77A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT55M50JFLL. It has a maximum Rds On and voltage of 50mohm @ 38.5a, 10v. It features n-channel 550v 77a (tc) 694w (tc) chassis mount isotop®. The product's input capacitance at maximum includes 12400pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 5v @ 5ma. The product power mos 7®, is a highly preferred choice for users. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 265nc @ 10v. isotop® is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sot-227-4, minibloc. The product carries maximum power dissipation 694w (tc). The product has a 550v drain to source voltage. The continuous current drain at 25°C is 77a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.

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APT55M50JFLL(Datasheets)

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