Microsemi Corporation APT4F120K

APT4F120K Microsemi Corporation
Microsemi Corporation

Product Information

Rds On (Max) @ Id, Vgs:
4.6Ohm @ 2A, 10V
Detailed Description:
N-Channel 1200V 4A (Tc) 225W (Tc) Through Hole TO-220
Input Capacitance (Ciss) (Max) @ Vds:
1385pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
5V @ 500µA
Drain to Source Voltage (Vdss):
1200V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
43nC @ 10V
Supplier Device Package:
TO-220
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-220-3
Power Dissipation (Max):
225W (Tc)
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT4F120K. It has a maximum Rds On and voltage of 4.6ohm @ 2a, 10v. It features n-channel 1200v 4a (tc) 225w (tc) through hole to-220. The product's input capacitance at maximum includes 1385pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 5v @ 500µa. The product has a 1200v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 43nc @ 10v. to-220 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 225w (tc). The continuous current drain at 25°C is 4a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.

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Multiple Devices 30/Apr/2015(PCN Obsolescence/ EOL)
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APT4F120K(Datasheets)

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