Microsemi Corporation APT40M70LVFRG

APT40M70LVFRG Microsemi Corporation
Microsemi Corporation

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 2.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-264-3, TO-264AA
Gate Charge (Qg) (Max) @ Vgs:
495 nC @ 10 V
Rds On (Max) @ Id, Vgs:
70mOhm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
400 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
8890 pF @ 25 V
Mounting Type:
Through Hole
Series:
POWER MOS V®
Supplier Device Package:
TO-264 [L]
Current - Continuous Drain (Id) @ 25°C:
57A (Tc)
Power Dissipation (Max):
520W (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT40M70LVFRG. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 2.5ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-264-3, to-264aa. The maximum gate charge and given voltages include 495 nc @ 10 v. It has a maximum Rds On and voltage of 70mohm @ 500ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 400 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 8890 pf @ 25 v. The product is available in through hole configuration. The product power mos v®, is a highly preferred choice for users. to-264 [l] is the supplier device package value. The continuous current drain at 25°C is 57a (tc). The product carries maximum power dissipation 520w (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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Mult Device OBS 15/Sep/2016(PCN Obsolescence/ EOL)
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