Microsemi Corporation APT30M70SVRG

APT30M70SVRG Microsemi Corporation
APT30M70SVRG
Microsemi Corporation

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Rds On (Max) @ Id, Vgs:
70mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
225 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
5870 pF @ 25 V
Mounting Type:
Surface Mount
Series:
POWER MOS V®
Supplier Device Package:
D3PAK
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
48A (Tc)
Power Dissipation (Max):
370W (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT30M70SVRG. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-268-3, d3pak (2 leads + tab), to-268aa. It has a maximum Rds On and voltage of 70mohm @ 500ma, 10v. The maximum gate charge and given voltages include 225 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 300 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 5870 pf @ 25 v. The product is available in surface mount configuration. The product power mos v®, is a highly preferred choice for users. d3pak is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 48a (tc). The product carries maximum power dissipation 370w (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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