Microsemi Corporation APT17F100S

APT17F100S Microsemi Corporation
Microsemi Corporation

Product Information

Rds On (Max) @ Id, Vgs:
780mOhm @ 9A, 10V
Detailed Description:
N-Channel 1000V 17A (Tc) 625W (Tc) Surface Mount D3Pak
Input Capacitance (Ciss) (Max) @ Vds:
4845pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
5V @ 1mA
Series:
POWER MOS 8™
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
150nC @ 10V
Supplier Device Package:
D3Pak
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Power Dissipation (Max):
625W (Tc)
Drain to Source Voltage (Vdss):
1000V
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT17F100S. It has a maximum Rds On and voltage of 780mohm @ 9a, 10v. It features n-channel 1000v 17a (tc) 625w (tc) surface mount d3pak. The product's input capacitance at maximum includes 4845pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product power mos 8™, is a highly preferred choice for users. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 150nc @ 10v. d3pak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-268-3, d³pak (2 leads + tab), to-268aa. The product carries maximum power dissipation 625w (tc). The product has a 1000v drain to source voltage. The continuous current drain at 25°C is 17a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.

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