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This is manufactured by Microsemi Corporation. The manufacturer part number is APT1001RBN. It has a maximum Rds On and voltage of 1ohm @ 5.5a, 10v. It features n-channel 1000v 11a (tc) 310w (tc) through hole to-247ad. The product's input capacitance at maximum includes 2950pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product power mos iv®, is a highly preferred choice for users. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 130nc @ 10v. to-247ad is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-247-3. The product carries maximum power dissipation 310w (tc). The product has a 1000v drain to source voltage. The continuous current drain at 25°C is 11a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.
For more information please check the datasheets.
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