Diodes Incorporated ZXMN3A02N8TA
Product Information
Rds On (Max) @ Id, Vgs:
25mOhm @ 12A, 10V
Detailed Description:
N-Channel 30V 7.3A (Ta) 1.56W (Ta) Surface Mount 8-SO
Input Capacitance (Ciss) (Max) @ Vds:
1400pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
26.8nC @ 10V
Supplier Device Package:
8-SO
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max):
1.56W (Ta)
Current - Continuous Drain (Id) @ 25°C:
7.3A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Diodes Incorporated
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This is manufactured by Diodes Incorporated. The manufacturer part number is ZXMN3A02N8TA. It has a maximum Rds On and voltage of 25mohm @ 12a, 10v. It features n-channel 30v 7.3a (ta) 1.56w (ta) surface mount 8-so. The product's input capacitance at maximum includes 1400pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 26.8nc @ 10v. 8-so is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The product carries maximum power dissipation 1.56w (ta). The continuous current drain at 25°C is 7.3a (ta). This product use mosfet (metal oxide) technology. The diodes incorporated's product offers user-desired applications.
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