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This is manufactured by Infineon Technologies. The manufacturer part number is SPI21N10. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 44µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. It has a maximum Rds On and voltage of 80mohm @ 15a, 10v. The maximum gate charge and given voltages include 38.4 nc @ 10 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 90w (tc). The product's input capacitance at maximum includes 865 pf @ 25 v. The product is available in through hole configuration. The product sipmos®, is a highly preferred choice for users. pg-to262-3-1 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 21a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to spi21n, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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