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This is manufactured by Infineon Technologies. The manufacturer part number is SPB35N10 G. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 83µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 44mohm @ 26.4a, 10v. The maximum gate charge and given voltages include 65 nc @ 10 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 150w (tc). The product's input capacitance at maximum includes 1570 pf @ 25 v. The product is available in surface mount configuration. The product sipmos®, is a highly preferred choice for users. pg-to263-3-2 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 35a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to spb35n, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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