Infineon Technologies SI3443DVTRPBF

SI3443DVTRPBF Infineon Technologies
SI3443DVTRPBF
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
65mOhm @ 4.4A, 4.5V
title:
SI3443DVTRPBF
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
2 (1 Year)
Power Dissipation (Max):
2W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1079 pF @ 10 V
Mounting Type:
Surface Mount
Series:
HEXFET®
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 4.5 V
Supplier Device Package:
Micro6™(TSOP-6)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
4.4A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Checking for live stock

This is manufactured by Infineon Technologies. The manufacturer part number is SI3443DVTRPBF. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 65mohm @ 4.4a, 4.5v. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 2 (1 year). The product carries maximum power dissipation 2w (ta). The product's input capacitance at maximum includes 1079 pf @ 10 v. The product is available in surface mount configuration. The product hexfet®, is a highly preferred choice for users. The maximum gate charge and given voltages include 15 nc @ 4.5 v. micro6™(tsop-6) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 4.4a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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Si3443DVPbF(Datasheets)

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