Infineon Technologies SI3443DVTR

SI3443DVTR Infineon Technologies
SI3443DVTR
SI3443DVTR
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS non-compliant
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
65mOhm @ 4.4A, 4.5V
title:
SI3443DVTR
Vgs(th) (Max) @ Id:
1.5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drain to Source Voltage (Vdss):
20 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1079 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 4.5 V
Supplier Device Package:
Micro6™(TSOP-6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
4.4A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is SI3443DVTR. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs non-compliant. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 65mohm @ 4.4a, 4.5v. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. In addition, it is reach unaffected. It carries FET type p-channel. The product has a 20 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1079 pf @ 10 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 15 nc @ 4.5 v. micro6™(tsop-6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 4.4a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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Si3443DV(Datasheets)

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