Infineon Technologies IRFHM830DTR2PBF

IRFHM830DTR2PBF Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.35V @ 50µA
Package / Case:
8-VQFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
27 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 20A, 10V
FET Type:
N-Channel
Package:
Cut Tape (CT)
Drain to Source Voltage (Vdss):
30 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1797 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
PQFN (3x3)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta), 40A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IRFHM830DTR2PBF. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.35v @ 50µa. Moreover, the product comes in 8-vqfn exposed pad. The maximum gate charge and given voltages include 27 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 4.3mohm @ 20a, 10v. It carries FET type n-channel. It is shipped in cut tape (ct) package . The product has a 30 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1797 pf @ 25 v. The product is available in surface mount configuration. pqfn (3x3) is the supplier device package value. The continuous current drain at 25°C is 20a (ta), 40a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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Yes. We ship IRFHM830DTR2PBF Internationally to many countries around the world.