Infineon Technologies IPP50R500CEXKSA1

IPP50R500CEXKSA1 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 200µA
Operating Temperature:
-
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
500mOhm @ 2.3A, 13V
title:
IPP50R500CEXKSA1
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
13V
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
433 pF @ 100 V
Mounting Type:
Through Hole
Series:
448
Gate Charge (Qg) (Max) @ Vgs:
18.7 nC @ 10 V
Supplier Device Package:
PG-TO220-3-1
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
7.6A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPP50R
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPP50R500CEXKSA1. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 200µa. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 500mohm @ 2.3a, 13v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 13v. The product has a 500 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 433 pf @ 100 v. The product is available in through hole configuration. The product 448, is a highly preferred choice for users. The maximum gate charge and given voltages include 18.7 nc @ 10 v. pg-to220-3-1 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 7.6a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ipp50r, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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