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This is manufactured by Infineon Technologies. The manufacturer part number is IPI111N15N3GAKSA1. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 160µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. The maximum gate charge and given voltages include 55 nc @ 10 v. It has a maximum Rds On and voltage of 11.1mohm @ 83a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 8v, 10v. It is shipped in bulk package . The product has a 150 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 214w (tc). The product's input capacitance at maximum includes 3230 pf @ 75 v. The product is available in through hole configuration. The product optimos™, is a highly preferred choice for users. pg-to262-3 is the supplier device package value. The continuous current drain at 25°C is 83a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ipi111, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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