Infineon Technologies IPB110N06L G

IPB110N06L-G Infineon Technologies IPB110N06L G
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 94µA
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
11mOhm @ 78A, 10V
title:
IPB110N06L G
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drain to Source Voltage (Vdss):
60 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2700 pF @ 30 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
79 nC @ 10 V
Supplier Device Package:
PG-TO263-3-2
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
78A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPB110N
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPB110N06L G. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 94µa. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 11mohm @ 78a, 10v. In addition, it is reach unaffected. It carries FET type n-channel. The product has a 60 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2700 pf @ 30 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 79 nc @ 10 v. pg-to263-3-2 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 78a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ipb110n, a base product number of the product. The product is designated with the ear99 code number.

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IPB,IPP110N06L G(Datasheets)

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