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This is manufactured by Infineon Technologies. The manufacturer part number is IPB049N06L3GATMA1. It has a maximum Rds On and voltage of 4.7mohm @ 80a, 10v. It features n-channel 60v 80a (tc) 115w (tc) surface mount d²pak (to-263ab). The product's input capacitance at maximum includes 8400pf @ 30v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.2v @ 58µa. The product optimos™, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 50nc @ 4.5v. d²pak (to-263ab) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The product carries maximum power dissipation 115w (tc). The product has a 60v drain to source voltage. The continuous current drain at 25°C is 80a (tc). This product use mosfet (metal oxide) technology. The infineon technologies's product offers user-desired applications.
For more information please check the datasheets.
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