Infineon Technologies IPB032N10N5ATMA1

Infineon Technologies

Product Information

Manufacturer Standard Lead Time:
39 Weeks
Detailed Description:
N-Channel 100V 166A (Tc) 187W (Tc) Surface Mount PG-TO263-7
Vgs(th) (Max) @ Id:
3.8V @ 125µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Gate Charge (Qg) (Max) @ Vgs:
95nC @ 10V
Rds On (Max) @ Id, Vgs:
3.2mOhm @ 83A, 10V
FET Type:
N-Channel
Manufacturer:
Infineon Technologies
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6970pF @ 50V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
166A (Tc)
Customer Reference:
Power Dissipation (Max):
187W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Infineon Technologies. The manufacturer part number is IPB032N10N5ATMA1. It has typical 39 weeks of manufacturer standard lead time. It features n-channel 100v 166a (tc) 187w (tc) surface mount pg-to263-7. The typical Vgs (th) (max) of the product is 3.8v @ 125µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-8, d²pak (7 leads + tab), to-263ca. The maximum gate charge and given voltages include 95nc @ 10v. It has a maximum Rds On and voltage of 3.2mohm @ 83a, 10v. It carries FET type n-channel. The infineon technologies's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 6970pf @ 50v. The product is available in surface mount configuration. The product optimos™, is a highly preferred choice for users. pg-to263-7 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 166a (tc). The product carries maximum power dissipation 187w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Wafer Chg 15/Jun/2018(PCN Assembly/Origin)
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Mult Dev Pkg Box Chg 3/Jan/2018(PCN Packaging)

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FAQs

Yes. You can also search IPB032N10N5ATMA1 on website for other similar products.
We accept all major payment methods for all products including ET15880316. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with IPB032N10N5ATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies IPB032N10N5ATMA1. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies IPB032N10N5ATMA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET15880316 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET15880316.
Yes. We ship IPB032N10N5ATMA1 Internationally to many countries around the world.