Infineon Technologies IPB019N08N3GATMA1

IPB019N08N3GATMA1 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-7, D2PAK (6 Leads + Tab)
Rds On (Max) @ Id, Vgs:
1.9mOhm @ 100A, 10V
title:
IPB019N08N3GATMA1
Vgs(th) (Max) @ Id:
3.5V @ 270µA
REACH Status:
REACH Unaffected
edacadModel:
IPB019N08N3GATMA1 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/1965817
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
300W (Tc)
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
14200 pF @ 40 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Gate Charge (Qg) (Max) @ Vgs:
206 nC @ 10 V
Supplier Device Package:
PG-TO263-7
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPB019
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPB019N08N3GATMA1. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-7, d2pak (6 leads + tab). It has a maximum Rds On and voltage of 1.9mohm @ 100a, 10v. The typical Vgs (th) (max) of the product is 3.5v @ 270µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The product has a 80 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 300w (tc). It has a long 18 weeks standard lead time. The product's input capacitance at maximum includes 14200 pf @ 40 v. The product is available in surface mount configuration. The product optimos™, is a highly preferred choice for users. The maximum gate charge and given voltages include 206 nc @ 10 v. pg-to263-7 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 180a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ipb019, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

Yes. You can also search IPB019N08N3GATMA1 on website for other similar products.
We accept all major payment methods for all products including ET15880299. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with IPB019N08N3GATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies IPB019N08N3GATMA1. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies IPB019N08N3GATMA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET15880299 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET15880299.
Yes. We ship IPB019N08N3GATMA1 Internationally to many countries around the world.