Infineon Technologies BUZ73A H3046

BUZ73A-H3046 Infineon Technologies BUZ73A H3046
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
600mOhm @ 4.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
530 pF @ 25 V
Mounting Type:
Through Hole
Series:
SIPMOS®
Supplier Device Package:
PG-TO220-3
Current - Continuous Drain (Id) @ 25°C:
5.5A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is BUZ73A H3046. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 600mohm @ 4.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 200 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 40w (tc). The product's input capacitance at maximum includes 530 pf @ 25 v. The product is available in through hole configuration. The product sipmos®, is a highly preferred choice for users. pg-to220-3 is the supplier device package value. The continuous current drain at 25°C is 5.5a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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BUZ 73A H(Datasheets)
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Part Number Guide(Other Related Documents)

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FAQs

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