Infineon Technologies BSS126L6327HTSA1

BSS126L6327HTSA1 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
Depletion Mode
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.6V @ 8µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
500Ohm @ 16mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
2.1 nC @ 5 V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
0V, 10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
28 pF @ 25 V
Mounting Type:
Surface Mount
Series:
SIPMOS®
Supplier Device Package:
PG-SOT23
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
21mA (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is BSS126L6327HTSA1. The FET features of the product include depletion mode. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.6v @ 8µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 500ohm @ 16ma, 10v. The maximum gate charge and given voltages include 2.1 nc @ 5 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 0v, 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 500mw (ta). The product's input capacitance at maximum includes 28 pf @ 25 v. The product is available in surface mount configuration. The product sipmos®, is a highly preferred choice for users. pg-sot23 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 21ma (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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BSS126(Datasheets)
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Fundamentals of Power Semiconductors(Other Related Documents)

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