Infineon Technologies BSP149L6327HTSA1

BSP149L6327HTSA1 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
Depletion Mode
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1V @ 400µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
1.8Ohm @ 660mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 5 V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
0V, 10V
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.8W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
430 pF @ 25 V
Mounting Type:
Surface Mount
Series:
SIPMOS®
Supplier Device Package:
PG-SOT223-4-21
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
660mA (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Checking for live stock

This is manufactured by Infineon Technologies. The manufacturer part number is BSP149L6327HTSA1. The FET features of the product include depletion mode. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1v @ 400µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. It has a maximum Rds On and voltage of 1.8ohm @ 660ma, 10v. The maximum gate charge and given voltages include 14 nc @ 5 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 0v, 10v. The product has a 200 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.8w (ta). The product's input capacitance at maximum includes 430 pf @ 25 v. The product is available in surface mount configuration. The product sipmos®, is a highly preferred choice for users. pg-sot223-4-21 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 660ma (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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