Infineon Technologies BSC0901NSIATMA1

BSC0901NSIATMA1 Infineon Technologies
Infineon Technologies

Product Information

Manufacturer Standard Lead Time:
22 Weeks
Detailed Description:
N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
BSC0901
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 15V
Rds On (Max) @ Id, Vgs:
2mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Infineon Technologies
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2600pF @ 15V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TDSON-8-6
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
28A (Ta), 100A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 69W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Infineon Technologies. The manufacturer part number is BSC0901NSIATMA1. It has typical 22 weeks of manufacturer standard lead time. It features n-channel 30v 28a (ta), 100a (tc) 2.5w (ta), 69w (tc) surface mount pg-tdson-8-6. The typical Vgs (th) (max) of the product is 2.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: bsc0901. The maximum gate charge and given voltages include 20nc @ 15v. It has a maximum Rds On and voltage of 2mohm @ 30a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The infineon technologies's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2600pf @ 15v. The product is available in surface mount configuration. The product optimos™, is a highly preferred choice for users. pg-tdson-8-6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 28a (ta), 100a (tc). The product carries maximum power dissipation 2.5w (ta), 69w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Assembly Site Add 24/Jun/2019(PCN Assembly/Origin)
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OptiMOS Wafer Addition 17/Dec/2015(PCN Design/Specification)
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Mult Dev Reel Design Chg 2/Dec/2019(PCN Packaging)
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Mult Dev Pkg Box Chg 3/Jan/2018(PCN Packaging)
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Part Number Guide(Other Related Documents)

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FAQs

Yes. You can also search BSC0901NSIATMA1 on website for other similar products.
We accept all major payment methods for all products including ET15877663. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with BSC0901NSIATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies BSC0901NSIATMA1. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies BSC0901NSIATMA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET15877663 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET15877663.
Yes. We ship BSC0901NSIATMA1 Internationally to many countries around the world.