Renesas Electronics America RJK0852DPB-00#J5

RJK0852DPB-00-J5 Renesas Electronics America RJK0852DPB-00#J5
Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
12mOhm @ 15A, 10V
Detailed Description:
N-Channel 80V 30A (Ta) 55W (Tc) Surface Mount LFPAK
Input Capacitance (Ciss) (Max) @ Vds:
4150pF @ 10V
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
28nC @ 4.5V
Drain to Source Voltage (Vdss):
80V
Vgs (Max):
±20V
Supplier Device Package:
LFPAK
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
SC-100, SOT-669
Power Dissipation (Max):
55W (Tc)
Current - Continuous Drain (Id) @ 25°C:
30A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJK0852DPB-00#J5. It has a maximum Rds On and voltage of 12mohm @ 15a, 10v. It features n-channel 80v 30a (ta) 55w (tc) surface mount lfpak. The product's input capacitance at maximum includes 4150pf @ 10v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 28nc @ 4.5v. The product has a 80v drain to source voltage. The maximum Vgs rate is ±20v. lfpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sc-100, sot-669. The product carries maximum power dissipation 55w (tc). The continuous current drain at 25°C is 30a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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Multiple Devices 15/Aug/2013(PCN Obsolescence/ EOL)
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Wafer Fabrication Site Change 02/Oct/2013(PCN Assembly/Origin)
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RJK0852DPB(Datasheets)

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