Renesas Electronics America RJK0353DPA-WS#J0B

RJK0353DPA-WS-J0B Renesas Electronics America RJK0353DPA-WS#J0B
Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
5.2mOhm @ 17.5A, 10V
Detailed Description:
N-Channel 30V 35A (Ta) 40W (Ta) Surface Mount WPAK(3F) (5x6)
Input Capacitance (Ciss) (Max) @ Vds:
2180pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
14nC @ 10V
Supplier Device Package:
WPAK(3F) (5x6)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Bulk
Operating Temperature:
150°C
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerVDFN
Power Dissipation (Max):
40W (Ta)
Current - Continuous Drain (Id) @ 25°C:
35A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJK0353DPA-WS#J0B. It has a maximum Rds On and voltage of 5.2mohm @ 17.5a, 10v. It features n-channel 30v 35a (ta) 40w (ta) surface mount wpak(3f) (5x6). The product's input capacitance at maximum includes 2180pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 14nc @ 10v. wpak(3f) (5x6) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, bulk is the available packaging type of the product. The product has 150°c operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powervdfn. The product carries maximum power dissipation 40w (ta). The continuous current drain at 25°C is 35a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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