Renesas Electronics America NP88N04NUG-S18-AY

Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
3.4mOhm @ 44A, 10V
Detailed Description:
N-Channel 40V 88A (Tc) 1.8W (Ta), 200W (Tc) Through Hole TO-262
Input Capacitance (Ciss) (Max) @ Vds:
15000pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
250nC @ 10V
Supplier Device Package:
TO-262
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max):
1.8W (Ta), 200W (Tc)
Current - Continuous Drain (Id) @ 25°C:
88A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is NP88N04NUG-S18-AY. It has a maximum Rds On and voltage of 3.4mohm @ 44a, 10v. It features n-channel 40v 88a (tc) 1.8w (ta), 200w (tc) through hole to-262. The product's input capacitance at maximum includes 15000pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 250nc @ 10v. to-262 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. The product carries maximum power dissipation 1.8w (ta), 200w (tc). The continuous current drain at 25°C is 88a (tc). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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Mult Devices EOL 15/Jun/2018(PCN Obsolescence/ EOL)
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Multiple Devices 28/Aug/2013(PCN Obsolescence/ EOL)
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Wafer Fabrication Site Change 10/Oct/2013(PCN Assembly/Origin)
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NP88N04NUG(Datasheets)

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