Renesas Electronics America NP36P06KDG-E1-AY
Product Information
Rds On (Max) @ Id, Vgs:
29.5mOhm @ 18A, 10V
Detailed Description:
P-Channel 60V 36A (Tc) 1.8W (Ta), 56W (Tc) Surface Mount TO-263
Input Capacitance (Ciss) (Max) @ Vds:
3100pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
54nC @ 10V
Supplier Device Package:
TO-263
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
175°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
1.8W (Ta), 56W (Tc)
Current - Continuous Drain (Id) @ 25°C:
36A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is NP36P06KDG-E1-AY. It has a maximum Rds On and voltage of 29.5mohm @ 18a, 10v. It features p-channel 60v 36a (tc) 1.8w (ta), 56w (tc) surface mount to-263. The product's input capacitance at maximum includes 3100pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 54nc @ 10v. to-263 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has 175°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The product carries maximum power dissipation 1.8w (ta), 56w (tc). The continuous current drain at 25°C is 36a (tc). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.
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