Renesas Electronics America NP35N04YUG-E1-AY

NP35N04YUG-E1-AY Renesas Electronics America
Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
10mOhm @ 17.5A, 10V
Detailed Description:
N-Channel 40V 35A (Tc) 1W (Ta), 77W (Tc) Surface Mount 8-HSON
Input Capacitance (Ciss) (Max) @ Vds:
2850pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
54nC @ 10V
Supplier Device Package:
8-HSON
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Operating Temperature:
175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-SMD, Flat Lead Exposed Pad
Power Dissipation (Max):
1W (Ta), 77W (Tc)
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is NP35N04YUG-E1-AY. It has a maximum Rds On and voltage of 10mohm @ 17.5a, 10v. It features n-channel 40v 35a (tc) 1w (ta), 77w (tc) surface mount 8-hson. The product's input capacitance at maximum includes 2850pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 54nc @ 10v. 8-hson is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-smd, flat lead exposed pad. The product carries maximum power dissipation 1w (ta), 77w (tc). The continuous current drain at 25°C is 35a (tc). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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NP35N04YUG(Datasheets)

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