Renesas Electronics America 2SJ673-AZ

Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
20mOhm @ 18A, 10V
Detailed Description:
P-Channel 60V 36A (Tc) 2W (Ta), 32W (Tc) Through Hole TO-220 Isolated Tab
Input Capacitance (Ciss) (Max) @ Vds:
4600pF @ 10V
Mounting Type:
Through Hole
Gate Charge (Qg) (Max) @ Vgs:
87nC @ 10V
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Supplier Device Package:
TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-220-3 Isolated Tab
Power Dissipation (Max):
2W (Ta), 32W (Tc)
Current - Continuous Drain (Id) @ 25°C:
36A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is 2SJ673-AZ. It has a maximum Rds On and voltage of 20mohm @ 18a, 10v. It features p-channel 60v 36a (tc) 2w (ta), 32w (tc) through hole to-220 isolated tab. The product's input capacitance at maximum includes 4600pf @ 10v. The product is available in through hole configuration. The maximum gate charge and given voltages include 87nc @ 10v. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. to-220 isolated tab is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in to-220-3 isolated tab. The product carries maximum power dissipation 2w (ta), 32w (tc). The continuous current drain at 25°C is 36a (tc). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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Multiple Devices 28/Aug/2013(PCN Obsolescence/ EOL)
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Wafer Fabrication Site Change 10/Oct/2013(PCN Assembly/Origin)
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2SJ673(Datasheets)

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