Rohm Semiconductor RP1L080SNTR

RP1L080SNTR Rohm Semiconductor
Rohm Semiconductor

Product Information

Rds On (Max) @ Id, Vgs:
24mOhm @ 8A, 10V
Detailed Description:
N-Channel 60V 8A (Ta) 2W (Ta) Surface Mount MPT6
Input Capacitance (Ciss) (Max) @ Vds:
1700pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 1mA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
Supplier Device Package:
MPT6
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
6-SMD, Flat Leads
Power Dissipation (Max):
2W (Ta)
Current - Continuous Drain (Id) @ 25°C:
8A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RP1L080SNTR. It has a maximum Rds On and voltage of 24mohm @ 8a, 10v. It features n-channel 60v 8a (ta) 2w (ta) surface mount mpt6. The product's input capacitance at maximum includes 1700pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 40nc @ 10v. mpt6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 6-smd, flat leads. The product carries maximum power dissipation 2w (ta). The continuous current drain at 25°C is 8a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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RP1L080SN(Datasheets)

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