Rohm Semiconductor RP1E075RPTR

RP1E075RPTR Rohm Semiconductor
Rohm Semiconductor

Product Information

Rds On (Max) @ Id, Vgs:
21mOhm @ 7.5A, 10V
Detailed Description:
P-Channel 30V 7.5A (Ta) 2W (Ta) Surface Mount MPT6
Input Capacitance (Ciss) (Max) @ Vds:
1900pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
21nC @ 5V
Supplier Device Package:
MPT6
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
6-SMD, Flat Leads
Power Dissipation (Max):
2W (Ta)
Current - Continuous Drain (Id) @ 25°C:
7.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RP1E075RPTR. It has a maximum Rds On and voltage of 21mohm @ 7.5a, 10v. It features p-channel 30v 7.5a (ta) 2w (ta) surface mount mpt6. The product's input capacitance at maximum includes 1900pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 21nc @ 5v. mpt6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in 6-smd, flat leads. The product carries maximum power dissipation 2w (ta). The continuous current drain at 25°C is 7.5a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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RP1E075RP(Datasheets)

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