Rohm Semiconductor 2SK2740

2SK2740 Rohm Semiconductor
2SK2740
Rohm Semiconductor

Product Information

Rds On (Max) @ Id, Vgs:
1.2Ohm @ 4A, 10V
Detailed Description:
N-Channel 600V 7A (Ta) 30W (Tc) Through Hole TO-220FN
Input Capacitance (Ciss) (Max) @ Vds:
1050pF @ 10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 1mA
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Drive Voltage (Max Rds On, Min Rds On):
10V
Supplier Device Package:
TO-220FN
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Power Dissipation (Max):
30W (Tc)
Current - Continuous Drain (Id) @ 25°C:
7A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is 2SK2740. It has a maximum Rds On and voltage of 1.2ohm @ 4a, 10v. It features n-channel 600v 7a (ta) 30w (tc) through hole to-220fn. The product's input capacitance at maximum includes 1050pf @ 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. to-220fn is the supplier device package value. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3 full pack. The product carries maximum power dissipation 30w (tc). The continuous current drain at 25°C is 7a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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2SK2740(Datasheets)

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