Toshiba Semiconductor and Storage TPN6R303NC,LQ

TPN6R303NC-LQ Toshiba Semiconductor and Storage TPN6R303NC,LQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.3V @ 200µA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
6.3mOhm @ 10A, 10V
edacadModel:
TPN6R303NC,LQ Models
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 10 V
RoHS Status:
RoHS Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/3821032
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
700mW (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1370 pF @ 15 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSVIII
Supplier Device Package:
8-TSON Advance (3.1x3.1)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPN6R303
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPN6R303NC,LQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.3v @ 200µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 6.3mohm @ 10a, 10v. The maximum gate charge and given voltages include 24 nc @ 10 v. The product is rohs compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 700mw (ta), 19w (tc). The product's input capacitance at maximum includes 1370 pf @ 15 v. It has a long 12 weeks standard lead time. The product is available in surface mount configuration. The product u-mosviii, is a highly preferred choice for users. 8-tson advance (3.1x3.1) is the supplier device package value. The continuous current drain at 25°C is 20a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpn6r303, a base product number of the product. The product is designated with the ear99 code number.

Reviews

  • Be the first to review.

FAQs

Yes. You can also search TPN6R303NC,LQ on website for other similar products.
We accept all major payment methods for all products including ET14929909. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with TPN6R303NC,LQ directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TPN6R303NC,LQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TPN6R303NC,LQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14929909 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14929909.
Yes. We ship TPN6R303NC,LQ Internationally to many countries around the world.