Toshiba Semiconductor and Storage TPCC8009,LQ(O

TPCC8009-LQ-O Toshiba Semiconductor and Storage TPCC8009,LQ(O
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 200µA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
7mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs:
26 nC @ 10 V
FET Type:
N-Channel
Drain to Source Voltage (Vdss):
30 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
1270 pF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSIV
Supplier Device Package:
8-TSON Advance (3.1x3.1)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
24A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPCC8009
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPCC8009,LQ(O. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 200µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 7mohm @ 12a, 10v. The maximum gate charge and given voltages include 26 nc @ 10 v. It carries FET type n-channel. The product has a 30 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1270 pf @ 10 v. The product is available in surface mount configuration. The product u-mosiv, is a highly preferred choice for users. 8-tson advance (3.1x3.1) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 24a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpcc8009, a base product number of the product. The product is designated with the ear99 code number.

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EOL 08/Nov/2013(PCN Obsolescence/ EOL)
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Mosfets Prod Guide(Datasheets)

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